Accession Number:
AD0733725
Title:
Photoresponse Characteristics of Extended Surface Barrier Diodes.
Descriptive Note:
Rept. for Nov-Dec 70,
Corporate Author:
AEROSPACE CORP EL SEGUNDO CALIF LAB OPERATIONS
Personal Author(s):
Report Date:
1971-08-15
Pagination or Media Count:
19.0
Abstract:
Surface barrier diodes which show a reversal of the photoresponse polarity with changing photon energy have been fabricated by diffusing Cu into heavily n-type GaAs. The photoresponse is found to depend strongly upon applied bias. These properties are explained in terms of a model in which a thin compensated region at the semiconductor surface allows the simultaneous photoemission of both holes and electrons from the metal into the semiconductor. Author
Descriptors:
Subject Categories:
- Electrical and Electronic Equipment