Photoresponse Characteristics of Extended Surface Barrier Diodes.
Rept. for Nov-Dec 70,
AEROSPACE CORP EL SEGUNDO CALIF LAB OPERATIONS
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Surface barrier diodes which show a reversal of the photoresponse polarity with changing photon energy have been fabricated by diffusing Cu into heavily n-type GaAs. The photoresponse is found to depend strongly upon applied bias. These properties are explained in terms of a model in which a thin compensated region at the semiconductor surface allows the simultaneous photoemission of both holes and electrons from the metal into the semiconductor. Author
- Electrical and Electronic Equipment