Accession Number:

AD0733725

Title:

Photoresponse Characteristics of Extended Surface Barrier Diodes.

Descriptive Note:

Rept. for Nov-Dec 70,

Corporate Author:

AEROSPACE CORP EL SEGUNDO CALIF LAB OPERATIONS

Personal Author(s):

Report Date:

1971-08-15

Pagination or Media Count:

19.0

Abstract:

Surface barrier diodes which show a reversal of the photoresponse polarity with changing photon energy have been fabricated by diffusing Cu into heavily n-type GaAs. The photoresponse is found to depend strongly upon applied bias. These properties are explained in terms of a model in which a thin compensated region at the semiconductor surface allows the simultaneous photoemission of both holes and electrons from the metal into the semiconductor. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE