Radiation Effects in Silicon and Germanium.
Final rept. 26 Feb 69-15 Sep 71,
NORTHROP CORPORATE LABS HAWTHORNE CALIF
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The report describes the results of several related studies of radiation effects in silicon and germanium. Recombination parameters are determined for Co60 gamma-irradiated n-type germanium low resistivity and n-type silicon. A study of transient photoconductivity decay in the presence of traps for both irradiated and unirradiated silicon and germanium is presented. Measurements of the injection-level dependence of minority-carrier lifetime for n- and p-type silicon with neutron dose as a parameter are reported. Useful relationships for recombination studies are presented, including a method for determining capture-probability temperature dependences. Short-term annealing studies include an investigation of transient recovery in p-type silicon following pulsed 1.4-MeV electron irradiation and an analytical treatment of the effects of metastable charge states on short-term annealing in p-type material. Data are presented which indicate that heat-treated Czochralski-grown Al-doped silicon that undergoes an appreciable resistivity increase during heating at 450C is significantly more resistant to both neutron and gamma irradiation than B-doped material. A technique for performing diffusion length measurements using a scanning electron microscope is described, and results of preliminary radiation effects studies on silicon employing this method are presented. Author
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics