Epitaxial Deposition Techniques.
Final rept. 1 Jul 69-30 Jun 71,
AUTONETICS ANAHEIM CALIF
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A two-year program for development of epitaxial deposition techniques for the growth of thin films of semiconductor and piezoelectric materials for use in surface-wave acoustic devices is described. The work of the first eighteen months is summarized briefly the final six months of the program is discussed in detail, with emphasis on acoustic device fabrication and evaluation in ZnO and AlN films. The program has emphasized chemical vapor deposition of ZnO, AlN and GaAs, prepared by metalorganic-hydride reactions, on substrates of LiNbO3, Si, Al2O3, and certain other semiconductor and piezoelectric materials.
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