Electron Bombarded Semiconductor Short Pulse Generator.
Triannual rept. 1 Apr-31 Jul 71,
WATKINS-JOHNSON CO PALO ALTO CALIF
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The fabrication, processing and preliminary testing of three EBS high-current high-speed pulse amplifiers were completed. Transconductance of the cathodegrid structure was measured and over 80 percent of the design goal performance has been obtained. Semiconductor target fabrication continued. Large area targets of 0.35 sq cm and 1.40 sq cm active area were successfully fabricated. The diodes have leakage currents of less than 10 mA at 200V reverse breakdown voltage. Three tubes were processed through 275C bakeout and cathode activation with no change in the diode characteristics. Preliminary pulse tests were made on the processed tubes. Twenty ampheres with 4 ns rise time were obtained from a tube with 0.35 sq cm semiconductor target active area. Eighty amperes with 10 ns risetime into 12 ohm load were obtained from a tube with 1.40 sq cm target. No change in diode reverse breakdown voltage was observed during pulse operation of the high-current amplifiers. Author
- Electrical and Electronic Equipment