Interface and Bulk Phenomena in Solid State Science.
Final scientific rept. 15 Sep 66-14 Sep 71,
ILLINOIS UNIV URBANA DEPT OF ELECTRICAL ENGINEERING
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Experimental and theoretical studies are undertaken on the electronic properties of surface and bulk regions of the interface between silicon and silicon oxide. Two electronic processes and their relationships to the atomic structures of the interface and to the electrical and optical characteristics of MOS devices are investigated. These are 1 scattering of electrons and holes by the imperfections at the interface region and the resultant mobilities, and 2 the surface state and oxide-trap state densities and their effects on the electron and hole trapping, generation and recombination rates, and on the low frequency 1f electrical noise. Author
- Electrical and Electronic Equipment
- Solid State Physics