Advanced Concepts of Microwave Generation and Control in Solids.
Quarterly progress rept. no. 3, 1 Apr-30 Jun 71,
CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING
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The report deals with the progress made during the third quarterly period of a solid state microwave oscillator and amplifier research and development program. Discussed first is the progress on Gunn effect research. Work on the following specific topics is reviewed high efficiency studies of LSA oscillators some harmonic properties of an LSA oscillator LSA circuit studies control of silicon contamination in GaAs a varactor tuned Gunn oscillator and a Gunn effect amplifier. The progress made on a parallel program on avalanche and transit time diode devices is also described. The following specific topics are reviewed experiments concerning harmonic generation higher average power TRAPATT considerations a new low noise Pt-n-p silicon Ku-band diode a new program on an IMPATT amplifier for FM signals harmonic generation and frequency mixing integrated IMPATT and TRAPATT oscillators high-frequency high-efficiency avalanche oscillations and measurements of IMPATT diode parameters at microwave frequencies. Finally, the progress made on the studies of solid state materials for microwave devices are reported. The topics include ion implantation and diffusion vacuum expitaxial growth in silicon and ionization rates in gallium arsenide. Author
- Electrical and Electronic Equipment
- Solid State Physics