Pulse Power Testing of Microcircuits.
ROME AIR DEVELOPMENT CENTER GRIFFISS AFB N Y
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Failure analysis of microcircuits subjected to high current transient pulses ranging from 100 nanoseconds to 10 microseconds in duration has shown the principal cause of failure to be junction shorting 98 as opposed to metallization burn-out 2. However, in the dielectrically isolated, thin film resistor technology, the weakest link was the susceptibility of the thin film resistors to the transient pulse. Author
- Electrical and Electronic Equipment