Accession Number:

AD0733272

Title:

The Annealing of ZnS Films on Silicon,

Descriptive Note:

Corporate Author:

SIGNALS RESEARCH AND DEVELOPMENT ESTABLISHMENT CHRISTCHURCH (ENGLAND)

Personal Author(s):

Report Date:

1971-03-01

Pagination or Media Count:

13.0

Abstract:

ZnS films were annealed over periods of a few minutes, while the structure was being observed by electron diffraction, and over 24 hour periods in a separate furnace. It is shown that for the range of thickness studied 0.1 - 1.2 micrometers, though it is possible to produce a definite improvement in structure it is not possible to produce single crystal films this is compared with the work of Cho and GaAs films. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE