Accession Number:

AD0733174

Title:

Annealing Behaviour of Proton-Irradiated M.O.S. Capacitors,

Descriptive Note:

Corporate Author:

MANITOBA UNIV WINNIPEG DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

• Card,H. C.
• Kao,K. C.

Report Date:

1970-10-15

Pagination or Media Count:

2.0

Abstract:

Radiation-induced charges in m.o.s. capacitors irradiated by protons can be effectively annealed out at a temperature of 300C. An activation-energy analysis of the isochronal annealing results shows that the potential barrier created by the radiation-induced space charges in the oxice layer has an energy distribution ranging from 0.5 to 1.1 eV above the conduction band edge of silicon. Author

Descriptors:

• (*SEMICONDUCTOR DEVICES
• RADIATION DAMAGE)
• (*CAPACITORS
• ANNEALING)
• PROTON BOMBARDMENT
• SILICON
• CANADA

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE