High Temperature Creep of Ceramic Oxides.
Final rept. 20 Mar 68-9 Jan 71,
BATTELLE MEMORIAL INST COLUMBUS OHIO COLUMBUS LABS
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The creep behavior and the dislocation substructure developed during creep were investigated for 011 oriented MgO single crystals in tension. The creep properties were studied over the stress and temperature ranges of 4200 to 12,500 psi and 1200 to 1500C and the creep behavior is described by a formula. The dislocation substructure developed during creep was studied by transmission electron microscopy and etch pitting techniques. The dislocation density at 0.10 tensile creep strain, which is in the general region of the steady state creep rate, was dependent on stress. Numerous boundaries were seldom observed. Author
- Ceramics, Refractories and Glass