Failure Mechanism Studies on Multilevel Metallization Systems for LSI.
Final rept. 20May 70-19 May 71,
TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR RESEARCH AND DEVELOPMENT LAB
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The objective of this investigation was the determination of quantitative information about the mechanisms of failure associated with aluminum-silicon dioxide-aluminum two-layer interconnection systems used on large scale integrated circuits. Author
- Electrical and Electronic Equipment
- Fabrication Metallurgy