Accession Number:

AD0731766

Title:

Recent Advances in the Growth of Epitaxial Gallium Arsenide.

Descriptive Note:

Research and development technical rept.,

Corporate Author:

ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s):

Report Date:

1971-06-01

Pagination or Media Count:

43.0

Abstract:

This report is a review of recent advances in the epitaxial growth of gallium arsenide. The lower temperatures 550-800C associated with the epitaxial process, as compared to bulk growth 1240C, has aided in the achievement of high purity gallium arsenide layers with low defect density and good homogeneity. A number of systems have been investigated and developed for epitaxial growth of gallium arsenide and each of these is discussed in regard to its associated technology and procedure, chemical reaction, indicated results, advantages and disadvantages. These systems include 1 vapor growth with the following vapor transport agents HCl, GaCl3, water vapor, iodine, arsine 2 liquid phase epitaxy 3 traveling solvent zone 4 vapor-liquid-solid 5 evaporation. All systems require a careful surface preparation of the substrate and the use of high purity starting materials to obtain high purity Gas with good homogeneity and crystal perfection. The highest reported mobility for GaAs was obtained using the liquid phase solution regrowth technique. Author

Subject Categories:

  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE