Silicon RF Power Transistor Metallization
Final rept. 6 Jul 1970-31 May 1971
MOTOROLA INC PHOENIX AZ SEMICONDUCTOR GROUP
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The effects of high temperatures and high current densities on the physical properties of aluminum metallization on semiconductor devices were studied. In particular, this research was concerned with three possible failure modes of the metallization electromigration, interdiffusion of silicon and aluminum, and metallization reconstruction due to thermal cycling. Electromigration theories are discussed and an engineering curve predicting MTF for an Al-2 Cu alloy was obtained.
- Electrical and Electronic Equipment
- Coatings, Colorants and Finishes