Band Structure and Electrical Properties of Amorphous Semiconductors
Semi-annual technical rept. no. 2, 1 Jan-30 Jun 1971
MASSACHUSETTS INST OF TECH CAMBRIDGE
Pagination or Media Count:
Tunneling studies into chalcogenide glasses are reviewed, in order to determine the density of localized states in these materials. Low-temperature 4-77K switching is investigated in order to determine whether or not trap- filling is a significant feature of the ON-state. The photovoltaic properties of metal-chalcogenide glass junctions is studied. The effects of thermal- neutron irradiation on the physical properties of chalcogenide glasses is investigated in detail. An intensive study of the EPR spectra of memory-type material in both the conducting and non-conducting states is planned. The comparative investigation of crystalline and amorphous Si2Te3 is given.
- Solid State Physics