Accession Number:

AD0730467

Title:

Band Structure and Electrical Properties of Amorphous Semiconductors

Descriptive Note:

Semi-annual technical rept. no. 2, 1 Jan-30 Jun 1971

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE

Personal Author(s):

Report Date:

1971-06-30

Pagination or Media Count:

13.0

Abstract:

Tunneling studies into chalcogenide glasses are reviewed, in order to determine the density of localized states in these materials. Low-temperature 4-77K switching is investigated in order to determine whether or not trap- filling is a significant feature of the ON-state. The photovoltaic properties of metal-chalcogenide glass junctions is studied. The effects of thermal- neutron irradiation on the physical properties of chalcogenide glasses is investigated in detail. An intensive study of the EPR spectra of memory-type material in both the conducting and non-conducting states is planned. The comparative investigation of crystalline and amorphous Si2Te3 is given.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE