Research on the Properties of Amorphous Semiconductors at High Temperatures
Semi-annual technical rept. no. 2, 18 Nov 1970-18 May 1971
ENERGY CONVERSION DEVICES INC TROY MI
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The report describes the work performed during the second six-month period of Contract DAHC15-70-C-0187. Emphasis on the compositional dependence of electrical and optical gaps and glass transition temperatures has been retained. In addition, detailed studies of thermoelectric power, switching behavior, thermal stability of thin films, crystallization kinetics, and electromigration have been initiated and extensive results of these studies are presented herein. These measurements have been obtained primarily on thin film samples produced by R. F. sputtering using an Argon plasma. The effects of thermal history in determining the physical properties of these thin amorphous films at 25C and as a function of temperature have been studied extensively. In addition the liquid heat capacity results report previously for liquid Ge17Te83 have been extended to include six other tellurium rich alloys including pure tellurium. Three contributed papers and one invited paper describing work performed under this contract were presented at the Fourth International Conference on Amorphous and Liquid Semiconductors in Ann Arbor, Michigan on August 9-13, 1971.
- Solid State Physics