Energy Migration in Irradiated Solids.
Final scientific rept. 1 Apr 67-30 Mar 71,
UNIVERSITY COLL DUBLIN (IRELAND) DEPT OF CHEMISTRY
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Evidence for energy migration over distances ca. 10 nm in semiconducting solids follows from results obtained on energy transfer at illuminated GasSemiconductor and Aqueous SolutionSemiconductor interfaces. Chemical changes at GasSemiconductor interfaces in the dark involved electron localization by adsorbed molecules as shown by studies of conductivity, electron spin resonance and kinetics. Additional chemical reaction was observed when these dark-equilibrated interfaces were exposed to u.v. light. For N2OgZnOs, observed photoconductivity and kinetic results were consistent with migration of photo-produced holes to the interface followed by electrons but the quantum efficiency was only 0.00001. For CD3IgZnOs, results were more consistent with migration of excitons. Author
- Radiation and Nuclear Chemistry
- Solid State Physics