Accession Number:
AD0730091
Title:
Electronic States and Transport in Highly Doped Semiconductors.
Descriptive Note:
Summary progress rept. 1 Dec 70-31 Aug 71,
Corporate Author:
WYOMING UNIV LARAMIE DEPT OF PHYSICS
Personal Author(s):
Report Date:
1971-09-01
Pagination or Media Count:
42.0
Abstract:
The resistivity and the Hall coefficient in doped semiconductors are calculated using the Green function method for high impurity concentration at temperatures near zero. The results are compared with the experimental results. Through this comparison, the effects of localized states in the impurity band to the resistivity and the Hall coefficient are investigated. Author
Descriptors:
Subject Categories:
- Solid State Physics