Electronic States and Transport in Highly Doped Semiconductors.
Summary progress rept. 1 Dec 70-31 Aug 71,
WYOMING UNIV LARAMIE DEPT OF PHYSICS
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The resistivity and the Hall coefficient in doped semiconductors are calculated using the Green function method for high impurity concentration at temperatures near zero. The results are compared with the experimental results. Through this comparison, the effects of localized states in the impurity band to the resistivity and the Hall coefficient are investigated. Author
- Solid State Physics