Accession Number:

AD0730018

Title:

New Methods for Growth and Characterization of GaAs and Mixed III-V Semiconductor Crystals

Descriptive Note:

Final technical rept. 1 Jul 1970-30 Jun 1971

Corporate Author:

UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB

Personal Author(s):

Report Date:

1971-08-19

Pagination or Media Count:

81.0

Abstract:

A new Czochralski technique for growing bulk gallium arsenide crystals has been invented and developed. A new technique for drying B2O3 for liquid encapsulation has been developed. It was discovered that surface moisture on vitreous B2O3 can be removed by exposing the material to a vacuum at room T. Improved smoothness of this films of GaAs grown by liquid epitaxial growth was achieved by adding rsenic to the hydrogen during growth. Alloy films have been grown and field effect transistors have been produced. Glow discharge spectroscopy was developed into an analytical technique for measuring and profiling the concentrations of constituents in this films. Theoretical advances have been made in the behavior of Schottky barriers. New polishing techniques, techniques for producing reliable ohmic contacts, and for orienting crystals have been developed.

Subject Categories:

  • Electrical and Electronic Equipment
  • Fabrication Metallurgy
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE