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Accession Number:
AD0729908
Title:
A Center of Competence in Solid State Materials and Devices
Descriptive Note:
Corporate Author:
FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING
Report Date:
1971-03-10
Pagination or Media Count:
232.0
Abstract:
In semiconductor and semiconductor device research, a complete equivalent circuit for the noise performance of phototransistors is developed and the current gain and cutoff frequency are derived from noise measurements. Study of the design of a detectors using the PME effect in gold-doped silicon shows the compromises required in the concentrations of gold and shallow-level impurities to yield both speed and sensitivity. Measurement of conductivity and Hall effect in In-doped and Cu-doped CdS reveals the impurity levels and dominant scattering mechanisms. Measurement of the PME and PC effects in gold- doped silicon yields the recombination parameters. A method is described that so selects model complexity in the simulation of transistor circuits as to save cpu time and to accommodate larger circuits than heretofore possible. In glass and semiconducting glass research, experiments demonstrate that crystallite size determines the threshold of fast-neutron damage in heterogeneous amorphous semiconductors. Various methods for surface characterization of ceramic powders are detailed. A computer program is described that calculates and plots pertinent behavior of electronic ceramic materials based on humidity-dependent dielectric data.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE
