Electron Beam Semiconductor Amplifier (L-Band).
Triannual rept. no. 2, 1 Nov 70-30 Apr 71,
WATKINS-JOHNSON CO PALO ALTO CALIF
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The objective of the program is to conduct experimental investigation of the design and fabrication techniques leading to the construction, testing and delivery of three experimental development model pulsed RF amplifiers which will generate 2,000 watts of peak pulse power in a 20 percent bandwidth centered at 1.3 GHz, 25 dB gain, and meet 50 percent efficiency objective. Author
- Electrical and Electronic Equipment