Infrared Photoconductivity of Electron-Irradiated Phosphorus Doped Silicon.
Final rept. 15 Sep 69-30 Apr 71,
RENSSELAER POLYTECHNIC INST TROY N Y DEPT OF NUCLEAR SCIENCE
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The annealing behavior and the uniaxial stress responses of the radiation - induced defect causing the E sub C - 0.75 eV, E sub C - 0.42 eV and E sub C - 0.18 eV photoconductivity energy levels in n-type silicon were studied after 1.5 MeV electron and 60Co gamma ray irradiation. The results suggest that the E sub C - 0.75 eV level arises from the electronic transition of the neutral charge state of the divacancy to the conduction band, the E sub C - 0.18 eV level arises from the A-center defect which exhibits only one kind of stress response, i.e. the atomic redistribution among the allowable orientations. No electronic response can be observed for the A-center in the case of photoconductivity measurements. The data fit very well with the A-center model given by G. D. Watkins and J. W. Corbett. Author
- Solid State Physics