Electron Bombarded Semiconductor Short Pulse Generator.
Triannual rept. no. 2, 1 Dec 70-31 Mar 71,
WATKINS-JOHNSON CO PALO ALTO CALIF
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A detailed mechanical design and parts fabrication for the EBS high-current high-speed pulse amplifier have been completed. The electron gun and beam modulating structure have been tested and uniform current density at the target position has been measured. A tube without semiconductor targets has been assembled and tested for transconductance and short pulse performance. A transconductance of .0082 mhos at 4.9 kV beam potential were measured. An output pulse risetime of 1.2 ns with 80 mA of beam current was achieved at 10 kV beam potential. A complete pulse amplifier with four 1 x 2.5 sq mm targets in parallel has also been assembled. No change in diode reverse breakdown voltage characteristics was observed during cathode activation and subsequent measurements of cathode emission. Author
- Electrical and Electronic Equipment