Accession Number:

AD0729080

Title:

Physical Properties of Semiconductors AIIIBV and IIIBVI (Selected Articles),

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

• Kagan,M. B.
• Koltun,M. M.
• Landsman,A. P.
• Agaev,Ya.
• Mikhailov,A. R.

Report Date:

1971-07-08

Pagination or Media Count:

26.0

Abstract:

Contents Optical properties of heavily doped gallium arsenide within a wide spectrum interval Certain electrical and thermal properties of AlSb crystals.

Descriptors:

• *SEMICONDUCTORS
• *GALLIUM ARSENIDES
• ELECTRICAL CONDUCTIVITY
• HALL EFFECT
• SEEBECK EFFECT
• THERMAL CONDUCTIVITY
• DOPING
• REFLECTIVITY
• ALUMINUM COMPOUNDS
• ANTIMONY ALLOYS
• USSR

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE