Accession Number:

AD0728800

Title:

Radiation Effects on Gallium Arsenide Phosphide and Gallium Phosphide Schottky Barrier Diodes.

Descriptive Note:

Technical rept.,

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH

Personal Author(s):

Report Date:

1971-07-01

Pagination or Media Count:

239.0

Abstract:

Gallium arsenide phosphide GaAsP and gallium phosphide GaP Schottky barrier diodes were fabricated and the transient ionizing and stable fast neutron radiation effects on these diodes were determined. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE