Accession Number:

AD0728800

Title:

Radiation Effects on Gallium Arsenide Phosphide and Gallium Phosphide Schottky Barrier Diodes.

Descriptive Note:

Technical rept.,

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH

Personal Author(s):

• Neamen,D. A.
• Grannemann,W. W.

Report Date:

1971-07-01

Pagination or Media Count:

239.0

Abstract:

Gallium arsenide phosphide GaAsP and gallium phosphide GaP Schottky barrier diodes were fabricated and the transient ionizing and stable fast neutron radiation effects on these diodes were determined. Author

Descriptors:

• *SEMICONDUCTOR DIODES
• RADIATION DAMAGE
• GALLIUM ARSENIDES
• PHOSPHIDES
• NEUTRON REACTIONS
• BAND THEORY OF SOLIDS

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE