Radiation Effects on Gallium Arsenide Phosphide and Gallium Phosphide Schottky Barrier Diodes.
NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH
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Gallium arsenide phosphide GaAsP and gallium phosphide GaP Schottky barrier diodes were fabricated and the transient ionizing and stable fast neutron radiation effects on these diodes were determined. Author
- Electrical and Electronic Equipment