Accession Number:

AD0728709

Title:

Channeling Effect Analysis of Lattice Disorder in Boron Implanted Silicon,

Descriptive Note:

Corporate Author:

CALIFORNIA INST OF TECH PASADENA DEPT OF PHYSICS

Personal Author(s):

Report Date:

1971-04-01

Pagination or Media Count:

143.0

Abstract:

The report describes a method for obtaining consistent disorder distributions from helium and proton backscattering analyses of the disordered regions in boron implanted silicon. Measurements are given of temperature effects on the disorder in regions of low temperature where such effects were not anticipated. An application of the backscattering analysis technique to study the composition of thin layers is presented. Author

Subject Categories:

  • Radioactivity, Radioactive Wastes and Fission Products
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE