Accession Number:
AD0728635
Title:
Investigation of Highly-Doped Schottky-Barrier Field-Effect Transistors,
Descriptive Note:
Corporate Author:
IBM WATSON RESEARCH CENTER YORKTOWN HEIGHTS N Y
Personal Author(s):
Report Date:
1970-12-16
Pagination or Media Count:
44.0
Abstract:
Schottky-barrier field-effect transistors with channel layers near 800 A thickness have been investigated. Investigations on palladium-silicon contacts have shown a barrier lowering exceeding the image-force lowering. Noise temperature measurements have been performed in the hot electron region to explain noise behavior of silicon Schottky-barrier FETs. The results indicate good agreement with the theory of Moll for low fields. GaAs Schottky-barrier FETs with high performance were realized in the one micron structure for gate length and contact separation. Device layout and technology are described in detail. A 17 GHz one-transistor oscillator with 4 mW output power and a four-stage amplifier operating at 14.9 GHz with a 3 dB bandwidth of 150MHz have been built with such GaAs transistors in a stripline technique. Author
Descriptors:
Subject Categories:
- Electrical and Electronic Equipment
- Solid State Physics