Accession Number:

AD0728635

Title:

Investigation of Highly-Doped Schottky-Barrier Field-Effect Transistors,

Descriptive Note:

Corporate Author:

IBM WATSON RESEARCH CENTER YORKTOWN HEIGHTS N Y

Personal Author(s):

Report Date:

1970-12-16

Pagination or Media Count:

44.0

Abstract:

Schottky-barrier field-effect transistors with channel layers near 800 A thickness have been investigated. Investigations on palladium-silicon contacts have shown a barrier lowering exceeding the image-force lowering. Noise temperature measurements have been performed in the hot electron region to explain noise behavior of silicon Schottky-barrier FETs. The results indicate good agreement with the theory of Moll for low fields. GaAs Schottky-barrier FETs with high performance were realized in the one micron structure for gate length and contact separation. Device layout and technology are described in detail. A 17 GHz one-transistor oscillator with 4 mW output power and a four-stage amplifier operating at 14.9 GHz with a 3 dB bandwidth of 150MHz have been built with such GaAs transistors in a stripline technique. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE