Accession Number:

AD0728611

Title:

Methods of Measurement for Semiconductor Materials, Process Control, and Devices.

Descriptive Note:

Quarterly rept. 1 Oct-31 Dec 70,

Corporate Author:

NATIONAL BUREAU OF STANDARDS GAITHERSBURG MD

Personal Author(s):

Report Date:

1971-08-01

Pagination or Media Count:

76.0

Abstract:

The quarterly progress report, tenth of a series, describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include successful application of the surface photovoltage technique, a non-contacting method, to the measurement of carrier diffusion length in silicon epitaxial layers and development of a novel, but simple, method for measurement of acceleration and terminal angular velocity of a photoresist spinner. Work is continuing on measurement of resistivity, carrier lifetime, and electrical inhomogeneities in semiconductor crystals specification of germanium for gamma-ray detectors evaluation of wire bonds, metallization adhesion, and die attachment measurement of thermal properties of semiconductor devices, transit-time and related carrier transport properties in junction devices, and electrical properties of microwave devices and characterization of silicon nuclear radiation detectors. Supplementary data concerning staff, standards committee activities, technical services, and publications are included as appendixes. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Fabrication Metallurgy
  • Test Facilities, Equipment and Methods
  • Nuclear Instrumentation
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE