High Temperature Annealing of Photoluminescence Bands in Irradiated Germanium.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
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The isochronal annealing behavior, between 20 degrees C and 420 degrees C, of radiation defects in cobalt-60 irradiated germanium was studied by photoluminescence. Spectra were recorded at liquid helium temperature for each 50 degrees C annealing interval, and relative intensity vs. annealing temperature curves were plotted for prominent defect bands. The annealing behavior of a 0.688eV zero-phonon line formed during room temperature irradiation suggests that it may be associated with the germanium A-center. New Mossbauer-type spectra with zero-phonon lines located at 0.686, 0.699, and 0.722eV appeared after annealing at 170 degrees C. Four bands believed to be caused by recombination at dislocations were also observed at 0.511, 0.518, 0.529, and 0.57eV. Author
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics