Accession Number:

AD0726941

Title:

Optoelectronic Electron Emitter

Descriptive Note:

Semiannual rept. 15 Oct 1970-14 Apr 1971

Corporate Author:

RCA LABS PRINCETON NJ

Personal Author(s):

• Schade, Horst
• Nelson, Herbert
• Kressel, Henry

Report Date:

1971-07-01

Pagination or Media Count:

23.0

Abstract:

An improved optoelectronic cold-cathode emitter structure was developed which is grown completely by liquid-phase epitaxy. The combination of an efficient Al1-xGaxAs light-emitting diode and long diffusion length GaAsGe layer has yielded a device emitting as much as 3Asq cm pulsed with an overall efficiency of 1.6 vacuum currentdiode current. Continuous operation was obtained at a current density of 0.4 Asq cm with an efficiency of 0.43, which was sustained for a period of 8 hr in a dynamic vacuum system.

Descriptors:

• *PHOTODIODES
• ELECTROLUMINESCENCE
• GALLIUM ARSENIDES
• GERMANIUM
• SEMICONDUCTOR DEVICES

Subject Categories:

• Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE