Optoelectronic Electron Emitter
Semiannual rept. 15 Oct 1970-14 Apr 1971
RCA LABS PRINCETON NJ
Pagination or Media Count:
An improved optoelectronic cold-cathode emitter structure was developed which is grown completely by liquid-phase epitaxy. The combination of an efficient Al1-xGaxAs light-emitting diode and long diffusion length GaAsGe layer has yielded a device emitting as much as 3Asq cm pulsed with an overall efficiency of 1.6 vacuum currentdiode current. Continuous operation was obtained at a current density of 0.4 Asq cm with an efficiency of 0.43, which was sustained for a period of 8 hr in a dynamic vacuum system.
- Electrooptical and Optoelectronic Devices