Accession Number:

AD0726916

Title:

Isothermal Annealing of the 0.97 Electron Volt Luminescence in Electron-Irradiated Silicon,

Descriptive Note:

Corporate Author:

ILLINOIS UNIV URBANA COORDINATED SCIENCE LAB

Personal Author(s):

Report Date:

1971-06-01

Pagination or Media Count:

49.0

Abstract:

Low temperature photoluminescence in pulled Si irradiated with 3 MeV electrons exhibits a prominent zero-phonon line at 0.97 eV which anneals between 200 and 275 degrees C according to previous isochronal data. Isothermal annealing measurements are reported which reveal an activation energy of about 1.34 eV for the annealing of this line. Author

Subject Categories:

  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE