Accession Number:

AD0726743

Title:

Development of GaAs Infrared Window Material

Descriptive Note:

Semi-Annual rept. 1 Dec 1970-31 May 1971

Corporate Author:

BELL AND HOWELL CO PASADENA CA ELECTRONIC MATERIALS DIV

Personal Author(s):

Report Date:

1971-06-01

Pagination or Media Count:

19.0

Abstract:

The metallurgical, analytical, electrical and optical properties of semi-insulating GaAs were further investigated. Optimization of the 10.6 micron optical absorption coefficient continued. The measurement equipment involving a CO2 laser was improved so that the homogeneity of samples can be evaluated. Doping experiments in GaSb gave closely-compensated but not high resistivity material--the maximum resistivity observed at room temperature was one ohm-cm. Evaluation of large diameter castings showed the need for a more controlled freezing surface, and plans have been made which will make this feasible.

Subject Categories:

  • Lasers and Masers
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE