Development of GaAs Infrared Window Material
Semi-Annual rept. 1 Dec 1970-31 May 1971
BELL AND HOWELL CO PASADENA CA ELECTRONIC MATERIALS DIV
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The metallurgical, analytical, electrical and optical properties of semi-insulating GaAs were further investigated. Optimization of the 10.6 micron optical absorption coefficient continued. The measurement equipment involving a CO2 laser was improved so that the homogeneity of samples can be evaluated. Doping experiments in GaSb gave closely-compensated but not high resistivity material--the maximum resistivity observed at room temperature was one ohm-cm. Evaluation of large diameter castings showed the need for a more controlled freezing surface, and plans have been made which will make this feasible.
- Lasers and Masers