Microwave Studies of Semiconductor Crystals.
Final rept. 1 Nov 66-31 Jan 71,
MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING
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For the past several years, microwave bulk effects have received considerable attention in many laboratories. This work has been principally motivated by prospects of generating and amplifying microwaves directly with bulk semiconductors. This research is of an allied but somewhat different nature. Bulk phenomena in elemental and compound semiconductors have been investigated by techniques in which measurements of magnitude, phase, and polarization of microwave signals reflected from a semiconductor surface were used. For normal electronic conduction, these measurements directly yielded the electron relaxation time and provided determinations of electron density, mobility, and effective mass. Three areas which were investigated are the large anisotropic change in microwave conductivity upon application of a uniaxial stress the anomalous microwave conductivity associated with electrons bound to impurity states at low temperature and the microwave conductivity of hot carriers under the influence of an exciting electric field. The information gained in this investigation has increased understanding of both the nature of bulk semiconductors in general, and also the precise physical mechanisms underlying these phenomena. Author
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