Accession Number:

AD0725237

Title:

Zuverlaessigkeit und Schaltungstecjnik Integrierter Schaltkreise mit Komplementaeren MOSFET-Transistoren (Reliability and Circuit Technology of Integrated Circuits with Complementary MOSFET Transistors),

Descriptive Note:

Corporate Author:

DEUTSCHE FORSCHUNGS- UND VERSUCHSANSTALT FUER LUFT- UND RAUMFAHRT E V OBERPFAFFENHOFEN (WEST GERMANY)

Personal Author(s):

Report Date:

1970-01-01

Pagination or Media Count:

30.0

Abstract:

In a first part of the paper the reliability of Complementary MOS Integrated Circuits C-MOS-circuits is covered. As initiation the technology of C-MOS circuits is described. The failure mechanisms which have been found for p-channel MOS-circuits show that the major reasons for failure are defects in the oxide, the metallization, in bonding and in electrical overstress and poor handling. New input-protection circuits give sufficient protection against transient and static overvoltages. The examination of the radiation resistance of C-MOS circuits by means of irradiation with electrons of 1 and 2,5 MeV energy shows, that these circuits can be used up to a total fluence of 1.5 x 10 to the 12th power electronssq cm. The results of the lifetime tests made for commercial units right off the production line by RCA give a failure rate of 0,048 1000 h after 1000 test hours. For circuits tested to the requirements of MIL-STD-883 class A a failure rate of 0,017 1000 h was obtained for 60 Confidence Level and operation at 55C. The second part of the work is concerned with the circuit design with C-MOS circuits. Rules for optimizing the circuits are given. Especially the design with respect to good noise immunity and the maintenance of the low power consumption is emphasized. In the field of digital applications a count-shift-register and a serially organized digital storage buffer are described. Finally the use of digital C-MOS circuits in linear applications is considered. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE