Growth and Characterization of Tetragonal (Rutile) GeO2 Crystals.
Physical sciences research papers,
AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS
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The use of germanium in semiconductor devices continues in importance but adequate substrate materials andor passivating insulating films for Ge are still lacking. Although such properties of the tetragonal oxide of germanium as chemical inertness and low electrical conductivity indicate it would be an excellent substratepassivating material for Ge semiconductor devices, various attempts to prepare this oxide have met with only limited success Albers, Valyocsik, and Mohan, 1966 Carasso and Faktor, 1965 Wilkes, 1964. This report describes a preparation method for this oxide as well as some previously unreported characteristics of the material. Author
- Solid State Physics