Junction Growth Techniques for GaAs Avalanche Transit Time Devices.
Semiannual rept. 1 Jul-31 Dec 70,
GTE LABS INC BAYSIDE N Y
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New techniques of liquid phase epitaxial growth have been employed to prepare GaAs wafers with thin high quality n layers and p layers. Wafers have been produced in p-n-n configurations with abrupt p-n and abrupt n-n junctions with p layers 1 to 3 micrometers thick and doping levels as high as 2 x 10 to the 19th powercc with n layers of average thickness 3 micrometers, electron concentration in the range 1 to 4 x 10 to the 16th powercc and mobility greater than 5000 sq cmV.sec at room temperature. These epitaxial layers have been grown on n substrate wafers with dislocation densities ranging from 500sq cm to about 100sq cm, electron concentrations in the range of 1 to 4 x 10 to the 18th power and electron mobilities ranging from 2500 sq cmV.sec to 2000 sq cmV.sec. The procedures and apparatus used for preparation of these epitaxial wafers are described in detail. In addition, the evaluation of these epitaxial wafers by techniques of capacitance-voltage profiling, infrared interference fringe measurement and x-ray anomalous diffraction contrast topography is described. Author
- Electrical and Electronic Equipment