Electronic and Radiation Damage Properties of Rutile
Technical rept. 1 Jun 1970-31 May 1971
UTAH UNIV SALT LAKE CITY DEPT OF PHYSICS
Pagination or Media Count:
A new mechanism to account for the anomalously large dielectric loss and apparent dielectric constant frequently observed in TiO2 is presented, which appears to agree well with experiment. The mechanism involves field-induced donor migration, resulting in a large decrease in electronic resistivity in part of the crystal. Experimental results on a variety of crystals are discussed, and the influence of electrode materials, surface condition, heat treatment and ambient is analyzed. A method for numerically calculating the resistivity profile of such a crystal from dielectric loss data is described. Results indicative of room temperature p-type conductivity, and a voltage-induced conduction process are presented.
- Solid State Physics