Accession Number:

AD0724103

Title:

On the Wurtzite-Type SiC Whiskers Obtained by Sublimation and the Thermal Stability of Basic SiC Polytypes,

Descriptive Note:

Corporate Author:

EMMANUEL COLL BOSTON MASS ORIENTAL SCIENCE RESEARCH LIBRARY

Personal Author(s):

Report Date:

1971-03-17

Pagination or Media Count:

22.0

Abstract:

2H-type SiC whiskers were obtained using the sublimation method. From the results of heating a powdered mixture of high-purity silicon and graphite, the thermal stability of basic SiC polytypes was discussed. The condlusions are summarized as follows Beta-SiC crystals grow in the entire temperature range under conditions of high supersaturation The initial phase which appears from heating Beta-SiC is mainly 6H above 1,600C and 4H or 2H below 1,400C 2H, 3C, and 6H are stable in the range below 1,400C, 1,400-1,600C, 1,600-2,100C, and above 2,100C, respectively. 15R is unstable throughout the entire temperature range. Author

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE