Accession Number:

AD0724102

Title:

Effect of Aluminum Doping on the Thermal Stability of 4H- and 6H-SiC,

Descriptive Note:

Corporate Author:

EMMANUEL COLL BOSTON MASS ORIENTAL SCIENCE RESEARCH LIBRARY

Report Date:

1971-03-17

Pagination or Media Count:

22.0

Abstract:

The effect of aluminum doping on the thermal stability of basic SiC polytypes was studied experimentally in the range 2,000-2,400C. The doping was performed by adding alumina to a mixture of powdered silicon and carbon. The relative amount of 4H increased with increasing content of aluminum in the SiC powder. The same aluminum effect was shown when high-purity alpha-SiC was used. The stability of the 4H structure by aluminum doping was attributed to lattice distortion. The 15R-type was found quasi-stable under these conditions. Author

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE