Bulk Semiconductor Limiters.
Quarterly progress rept. no. 2, 1 Aug-31 Oct 70,
RENSSELAER RESEARCH CORP TROY N Y ELECTRONIC SYSTEMS DEPT
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Emphasis was placed upon the redesign of the silicon limiter element with a view toward increased isolation at high incident power levels and increased maximum power handling capability. The redesign includes new silver-silicon metallization techniques for improved mechanical and thermal properties and the further development of the checkerboard contact for its increased isolation and improved recovery time characteristics. The recovery of the insertion loss to within 3.0 dB of the low level value occurs within 1 usec for limiters with checkerboard contacts in a 2 kW duplexer. This is an improvement by a factor of 5 over the limiters with simple diffused contacts. Other results presented concern gold doping studies and new iris configurations. Author
- Electrical and Electronic Equipment