GaAs Junction Field-Effect Transistor Radiation Study.
Final rept. May 70-Feb 71,
MCDONNELL DOUGLAS ASTRONAUTICS CO-WEST HUNTINGTON BEACH CALIF
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Active and passive GaAs devices, fabricated from epitaxial N-type material in a doping range from 10 to the 16th power to 10 to the 17th powercu cm, were exposed to a fast neutron fluence E10 keV of 2 x 10 to the 15th power nsq cm2. The experimental GaAs J-FETs have a nominal channel length of 5 microns, i.e., maximum frequency of oscillation between 4 and 6 GHz. In reasonable accord with predictions experimental GaAs J-FETs with a channel doping concentration of 5 x 10 to the 16th powercu cm measured a 20 degradation of transconductance and pinch-off voltage when exposed to a fluence of 2 x 10 to the 15th power neutronssq cm. Devices with channel doping concentrations of 10 to the 17th powercu cm are predicted to survive fluences of about 10 to the 16th power neutronssq cm. Parasitic device elements are identified and their influence on determination of normalized degradation parameters is discussed. A comparison between Si and GaAs J-FETs of comparable channel doping is presented. Author
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics