Accession Number:

AD0722775

Title:

Microwave Investigation of Semiconducting Material,

Descriptive Note:

Corporate Author:

OXFORD UNIV (ENGLAND) DEPT OF ENGINEERING SCIENCE

Personal Author(s):

Report Date:

1970-10-01

Pagination or Media Count:

158.0

Abstract:

After a survey of microwave solid state power sources, the work discusses the determination of velocity field characteristics of GaAs. The measurement method used by the author involves interaction of high power microwaves with a semiconductor sample. In this way the mean conductivity during the pulse is measured corresponding to a time averaged value of the electron velocity. A bridge circuit was used and the samples were rod shaped. For test reasons the velocity field characteristic of Germanium was measured. In the case of GaAs the results are worked out by means of an extension of Marcuvitzs analysis of the impedance of a rod mounted inductively in the wave guide. Experiments were carried out at temperatures between 300K and 450K. A mathematical technique is described by means of which the velocity field characteristic was deduced from the mean values recorded by the experiment. The temperature variation of the velocity field characteristic of GaAs was used to estimate the temperature dependence of Gunn diode efficiency as a function of bias field. The efficiency is substantially higher at lower temperatures. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE