Accession Number:

AD0722701

Title:

An Experimental Study of the Vibronic and Electronic Resonance Raman Effect in Semiconductor and Garnet Crystals.

Descriptive Note:

Technical rept.,

Corporate Author:

YALE UNIV NEW HAVEN CONN DEPT OF ENGINEERING AND APPLIED SCIENCE

Personal Author(s):

Report Date:

1971-03-01

Pagination or Media Count:

164.0

Abstract:

The work describes the first observation of resonant cancellation of Raman scattering from lattice vibrations in CdS and electronic levels in DyAlG. Previous experimental measurements and theoretical predictions had indicated that the Raman scattering cross section should increase monotonically as the energy of the incident radiation approached that of a fundamental electronic transition of the crystal. Essential to this investigation was the availability of a multi-wavelength source of intense monochromatic light. A sensitive Raman spectroscopy system was constructed which employed a flowing-gas cw argon-krypton-xenon laser. A control of 22 lasing transitions was achieved the maximum output power was 0.65W at 514.5 nm. Samples were mounted in a liquid nitrogen cold-finger dewar. Right-angle scattering was employed with the scattered radiation detected by the usual combination of a tandem double-monochromator and a photomultiplier tube. A photon counter with digitalanalog outputs drove an x-y recorder which displayed the resultant spectra. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE