Accession Number:

AD0722695

Title:

GEISHA Semiconductor Reliability Studies. A Portion of CHAIR-GEISHA.

Descriptive Note:

Annual technical rept. no. 1, 1 Feb 70-31 Jan 71,

Corporate Author:

WESTINGHOUSE RESEARCH LABS PITTSBURGH PA

Personal Author(s):

Report Date:

1971-04-22

Pagination or Media Count:

53.0

Abstract:

Studies of radiation effects have been made on gate-controlled diodes with several dielectric passivation systems. Primarily, the surface generation current density increases to about the same final level regardless of its initial value. Exceptions are cases of a passivation system of silicon nitride over residual silicon oxide and certain structures with a polyimide overcoating. Results of the gate-controlled diode studies generally transfer to results on large area, two terminal GEISHA targets. At high junction current levels 10 microamp the room temperature reverse voltage capability is not seriously reduced even after high dose irradiations 0.00026 asq cm, 0.024 coulsq cm. Phosphorus gettering has been used to reduce bulk generation current effects in GEISHA targets, thus permitting their use at higher operating temperatures. Passivation using nitride films over thin oxides or protection with polyimide can preserve the low surface generation current properties of gettered material. Additional technology has been developed in patterning polyimide films and in making low thermal impedance mounts for the targets. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE