Conduction Mechanisms in Epitaxial Gallium Arsenide.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
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Electrical conduction in high quality epitaxial GaAs is quantatively explained for low fields and temperatures from 4K to room temperature. Other conduction mechanisms found in less pure GaAs are also discussed. A technique for making Hall bridged in epitaxial material is described, as well as the technique and equipment for Hall effect measurements. A computer routine is presented which solves for impurity concentrations from Hall mobility and resistivity in the temperature range 15K to 30K together with room temperature Hall coefficient. Author
- Solid State Physics