Accession Number:

AD0722490

Title:

Plasma Anodization.

Descriptive Note:

Final technical rept. 5 Nov 69-31 Oct 70,

Corporate Author:

BRITISH COLUMBIA UNIV VANCOUVER DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1971-03-01

Pagination or Media Count:

56.0

Abstract:

The anodization of Ta, Nb and Si was carried out in oxygen plasmas generated by both hot and cold cathode discharges and by an externally-coupled r.f. voltage. For the anodization of Nb in a.d.c. cold cathode discharge, the existence of a high field ionic conduction mechanism as the operative growth process has been confirmed. However, on the basis of a simple model for the metaloxideplasma system, it appears that under some circumstances the field in the oxide is controlled by the large electronic currents flowing, and furthermore, that the negative oxygen ions relevant to the oxide growth are formed either at the sample surface or in the sheath surrounding it. Anodization in a hot cathode discharge improves the oxide growth rate but introduces problems as regards sample heating and contamination. These latter two factors can lead to reduced quality of the resulting dielectric films. Anodization of Si in an r.f. plasma gives relatively fast growth rates about 15 Amin and preliminary data indicate that the mechanism of oxide growth involves an impact ionization process. Author

Subject Categories:

  • Coatings, Colorants and Finishes

Distribution Statement:

APPROVED FOR PUBLIC RELEASE