Accession Number:

AD0722474

Title:

A Center of Competence in Solid State Materials and Devices

Descriptive Note:

Corporate Author:

FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING

Report Date:

1970-10-10

Pagination or Media Count:

325.0

Abstract:

Contents Physical origins of burst noise in transistors Noise in phototransistors and photodiodes Impurity concentration dependent density of states at the Fermi level Recombination and trapping of the photo-excited carriers in gold-doped silicon Unified modeling of field-effect devices Simultaneous automated ac and dc design of linear semiconductor integrated circuit amplifiers The effect of crystallization on the strength of Li2O-SiO2 glass-ceramics The early stages of crystallization in a Li2O-SiO2 glass Electrical properties of glass Solid solution decomposition of aluminum-rich aluminum-zinc-silver alloys Metal tip holder for field-ion microscope.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE