Accession Number:

AD0722369

Title:

A Statistical Theory of Avalanche Breakdown in Silicon.

Descriptive Note:

Technical rept.,

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH

Personal Author(s):

Report Date:

1971-04-01

Pagination or Media Count:

83.0

Abstract:

A statistical theory of avalanche breakdown in silicon is presented, based on the conventional Boltzmann transport equation. The scattering mechanisms considered are impact ionization electron-hole pair production, phonon emission and absorption, thermal generation and recombination. The resultant critical field is found to depend on the recombination statistics, which were ignored in previous theories of avalanche breakdown. The theoretical temperature dependence is compared with the temperature dependence of the breakdown voltages of three commercial diodes. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE