A Statistical Theory of Avalanche Breakdown in Silicon.
NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH
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A statistical theory of avalanche breakdown in silicon is presented, based on the conventional Boltzmann transport equation. The scattering mechanisms considered are impact ionization electron-hole pair production, phonon emission and absorption, thermal generation and recombination. The resultant critical field is found to depend on the recombination statistics, which were ignored in previous theories of avalanche breakdown. The theoretical temperature dependence is compared with the temperature dependence of the breakdown voltages of three commercial diodes. Author
- Electrical and Electronic Equipment
- Solid State Physics