Accession Number:

AD0722061

Title:

The Development and Use of Scattering Parameters for Semiconductor Junction Devices.

Descriptive Note:

Technical rept.,

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH

Personal Author(s):

Report Date:

1971-03-01

Pagination or Media Count:

193.0

Abstract:

Scattering parameters are developed for diodes and transistors. The parameters are developed through a modification of the wave equation from quantum mechanics. The effects of pulsed X-ray radiation on these devices is then calculated with the use of these parameters. Various methods of analyzing semiconductor junction devices are discussed. These methods include diffusion theory, invariant imbedding and quantum mechanics. The background in these areas necessary for a discussion of semiconductor models is outlined. Models resulting from the three basic approaches are presented. These include the Ebers-Moll Model, the Sparks Charge Control Model, the Linville Model, the Gore Model, the MLB McKelvey, Longini and Brody Model and the Kronig-Penney Model. The importance of using the correct model in calculating the effects of ionizing radiation is emphasized. Small-signal models are introduced. It is shown that semiconductors can be modeled through quantum mechanics by introducing a new term into the Schrodinger Wave Equation. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE