Accession Number:

AD0722059

Title:

Radiation-Hardened GaAsP MIS Field-Effect Transistor Feasibility Study.

Descriptive Note:

Technical rept.,

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH

Personal Author(s):

Report Date:

1970-12-01

Pagination or Media Count:

78.0

Abstract:

A study has been performed to examine the feasibility of developing a radiation-hardened GaAsP MISFET IC technology. Particular attention has been given to the question of whether the theoretical advantages of GaAsP over silicon are sufficient to warrant the development of the GaAsP MISFET technology. The advantages of high electron mobility, high temperature operation, thermal annealing of radiation damage, low radiation-induced photocurrent response, unique dielectric isolation adaptability, and resistance to thermal shock from a nuclear burst are discussed. This technology-development feasibility study evaluates the characteristics of the devices which could be fabricated if the GaAsP MISFET technology is developed. Equations are developed which describe the circuit performance of a p-channel MIS-load, inverter circuit. A study of these equations shows how materials parameters mobility, permittivity, etc. affect the performance of both GaAsP and silicon inverters. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE