Radiation-Hardened GaAsP MIS Field-Effect Transistor Feasibility Study.
NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH
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A study has been performed to examine the feasibility of developing a radiation-hardened GaAsP MISFET IC technology. Particular attention has been given to the question of whether the theoretical advantages of GaAsP over silicon are sufficient to warrant the development of the GaAsP MISFET technology. The advantages of high electron mobility, high temperature operation, thermal annealing of radiation damage, low radiation-induced photocurrent response, unique dielectric isolation adaptability, and resistance to thermal shock from a nuclear burst are discussed. This technology-development feasibility study evaluates the characteristics of the devices which could be fabricated if the GaAsP MISFET technology is developed. Equations are developed which describe the circuit performance of a p-channel MIS-load, inverter circuit. A study of these equations shows how materials parameters mobility, permittivity, etc. affect the performance of both GaAsP and silicon inverters. Author
- Electrical and Electronic Equipment