Accession Number:

AD0720931

Title:

The Synthesis of Epitaxial Gallium Arsenide Layers,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

Report Date:

1971-01-15

Pagination or Media Count:

10.0

Abstract:

A GaAs substrate was coated with a thin layer of Ga, sealed in an ampul containing a few pieces of GaAs and the ampul was placed in a 2-zone furnace with a small temperature gradient at less than 1000 degrees. An equilibrium vapor pressure of As was established within the ampul, and as a result an epitaxial layer of GaAs grew from the Ga layer the thickness of the epitaxial layer reached approximately 40 mu after 20-30 minutes, and decreased with increasing initial thickness of the Ga layer. The GaAs film had a single-crystal structure without stacking faults. Author

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE